bas16 bas16, rev. c bas16 small signal diode * these ratings are limiting values above which the serviceability of any semiconductor device may be impaired. notes : 1) these ratings are based on a maximum junction temperature of 150 degrees c. 2) these are steady state limits. the factory should be consulted on applications involving pulsed or low duty cycle operations. ? 2001 fairchild semiconductor corporation 3 1 2 sot-23 1 2 3 a6 connection diagram 3 1 2nc absolute maximum ratings* t a = 25c unless otherwise noted symbol parameter value units v rrm maximum repetitive reverse voltage 85 v i f(av) average rectified forward current 200 ma i fsm non-repetitive peak forward surge current pulse width = 1.0 second pulse width = 1.0 microsecond 1.0 2.0 a a t stg storage temperature range -55 to +150 c t j operating junction temperature -55 to +150 c thermal characteristics electrical characteristics t a = 25c unless otherwise noted symbol parameter value units p d power dissipation 350 mw r ja thermal resistance, junction to ambient 357 c/w symbol parameter test conditions min max units v r breakdown voltage i r = 5.0 a 85 v v f forward voltage i f = 1.0 ma i f = 10 ma i f = 50 ma i f = 150 ma 715 855 1.0 1.25 mv mv v v i r reverse current v r = 75 v v r = 25 v, t a = 150 c v r = 75 v, t a = 150 c 1.0 30 50 a a a c t total capacitance v r = 0, f = 1 . 0 m h z 2 . 0 pf t rr reverse recovery time i f = i r = 10 ma, i rr = 1.0 ma, r l = 100 ? 6.0 ns
bas16 bas16, rev. c small signal diode (continued) 1 2 3 5 10 20 30 50 100 11 0 120 130 1 4 0 1 5 0 r e v erse c urr ent , i r [ u a ] r ta= 25 c ta= 25 c gener al r ule: t he reverse current of a di ode will approximately double for every ten (10) degree c increase in temperature 10 20 30 50 70 100 0 50 100 150 200 250 300 reverse voltage, v r [v] reverse current, i r [ n a] 225 1 2 3 5 10 20 30 50 100 250 300 350 400 450 f o rw ar d cur re nt , i f [ u a ] f or war d vo ltag e , v f [ m v ] f f 485 ta= 25 c 0 . 1 0 . 2 0 . 3 0 . 5 1 2 3 5 10 450 500 550 600 650 700 forward current, i f [ m a] forward voltage, v f [mv] f 725 ta= 25 c r ev er se vol tag e , v r [ v] 10 20 30 50 100 200 300 500 0.6 0.8 1 1.2 1.4 forward current, i f [ m a] forward voltage, v f [ v] f 1.5 ta = 2 5 c 02468101214 1 1.1 1.2 1.3 r eve rs e v ol ta ge [ v ] t o ta l c a p a c i t an ce, c t [ p f ] ta = 2 5 c 15 typical characteristics fi gu re 1 . r e ve rse v olt ag e vs r eve rse c urr en t bv - 1.0 to 100 ua figure 2 . r eve rs e c ur re nt vs r eve r se v ol ta ge ir - 10 to 100 v figure 3 . f orw ar d v ol ta ge vs f or war d c urr en t vf - 1.0 to 100 ua figure 4 . forward voltage vs forward current vf - 0.1 to 10 ma figure 5 . forward voltage vs forward current vf - 10 - 800 ma fi gu re 6. tot al ca pa ci ta nce
bas16 bas16, rev. c 05 0 10 0 150 0 1 0 0 2 0 0 3 0 0 4 0 0 5 0 0 i - f o r w ard c urr e nt s t e a d y s t a te - m a o d r a i o - a v e ra g e r e c t i f i e d c urr e nt - m a i r r ( r e v e r s e r e c o v e ry c u rr e n t ) = 1 . 0 ma - r l o o p = 1 0 0 o h ms 10 20 30 40 50 60 1 1 . 5 2 2 . 5 3 3 . 5 4 reverse current [ma] reverse recovery time, t r r [ns] t a = 2 5 c 0 5 0 1 00 1 50 2 00 0 1 0 0 2 0 0 3 0 0 4 0 0 5 0 0 a ve r age t em pe ra tu re, i o ( c ) power d iss ip at io n, p d [ m w] o do-35 pkg sot-23 pkg small signal diode (continued) typical characteristics (continued) 050100150 0 100 200 300 400 i f( a v ) - ave rag e re ct i f i e d curre nt - m a c u r r e n t [ m a] a m b i e n t t e m p e r a t u r e , t a [ c] figure 7. reverse recovery time figure 8. average rectified current (i f(av) )
vs reverse current versus
ambient temperature (t a ) trr - ir 10 ma vs 60 ma figrue 9. power derating curve o
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